The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Apr. 10, 2007
Applicants:

Anco Heringa, Waalre, NL;

Thomas Frach, Aachen, DE;

Prabhat Agarwal, Brussels, BE;

Inventors:

Anco Heringa, Waalre, NL;

Thomas Frach, Aachen, DE;

Prabhat Agarwal, Brussels, BE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A radiation detector () includes a semiconductor layer(s) () formed on a substrate () and a scintillator () formed on the semiconductor layer(s) (). The semiconductor layer(s) () includes an n-doped region () disposed adjacent to the substrate (), and a p-doped region () disposed adjacent to the n-doped region (). A trench () is formed within the semiconductor layer(s) () and around the p-doped region () and is filled with a material () that reduces pn junction curvature at the edges of the pn junction, which reduces breakdown at the edges. The scintillator () is disposed over and optically coupled to the p-doped regions (). The radiation detector () further includes at least one conductive electrode () that electrically contacts the n-doped region.


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