Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier

Abstract

The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc. The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 10to 10cm −and which consists of cells, each of which comprises a p− type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 10to 10cmand which is grown on the substrate, a p− type conductivity layer whose dope additive concentration ranges from 10to 10cmand a n+ type conductivity layer whose dope additive concentration ranges from 10to 10cm, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells. Said silicon photoelectric multiplier (variant 2) comprising a n− type conductivity substrate to which a p++-type conductivity whose dope additive concentration ranges from 10-10cm−is applied and consists of cells, wherein in each cell a polysilicon resistor is placed on a silicon oxide layer and separating elements are disposed between the cells.