The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Oct. 24, 2006
Seong-hwee Cheong, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Jong-won Hong, Suwon-si, KR;
Seung-gil Yang, Yongin-si, KR;
Kyung-in Choi, Chuncheon-si, KR;
Hyun-bae Lee, Suwon-si, KR;
Seong-Hwee Cheong, Seoul, KR;
Sang-Woo Lee, Seoul, KR;
Jong-Won Hong, Suwon-si, KR;
Seung-Gil Yang, Yongin-si, KR;
Kyung-In Choi, Chuncheon-si, KR;
Hyun-Bae Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor memory device and a method of fabricating the same are disclosed. The semiconductor memory device may include a conductive layer doped with impurities, a non-conductive layer on the conductive layer and undoped with impurities, an interlayer insulating film on the non-conductive layer and having a contact hole for exposing an upper surface of the non-conductive layer, an ohmic tungsten film on the contact hole, a lower portion of the ohmic tungsten film permeating the non-conductive layer to come in contact with the conductive layer, a tungsten nitride film on the contact hole on the ohmic tungsten film, and a tungsten film on the tungsten nitride film to fill the contact hole.