The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Jul. 03, 2007
Applicants:

Kojiro Kameyama, Ota, JP;

Akira Suzuki, Ota, JP;

Yoshio Okayama, Brookline, MA (US);

Inventors:

Kojiro Kameyama, Ota, JP;

Akira Suzuki, Ota, JP;

Yoshio Okayama, Brookline, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

This invention provides a semiconductor device and a manufacturing method thereof which can minimize deterioration of electric characteristics of the semiconductor device without increasing an etching process. In the semiconductor device of the invention, a pad electrode layer formed of a first barrier layer and an aluminum layer laminated thereon is formed on a top surface of a semiconductor substrate. A supporting substrate is further attached on the top surface of the semiconductor substrate. A second barrier layer is formed on a back surface of the semiconductor substrate and in a via hole formed from the back surface of the semiconductor substrate to the first barrier layer. Furthermore, a re-distribution layer is formed in the via hole so as to completely fill the via hole or so as not to completely fill the via hole. A ball-shaped terminal is formed on the re-distribution layer.


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