The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Dec. 26, 2008
Chan Sun Hyun, Icheon-si, KR;
Chan Sun Hyun, Icheon-si, KR;
Hynix Semiconductor Inc., Gyeonggi-Do, KR;
Abstract
A method of forming damascene patterns of semiconductor devices comprise forming a first insulating layer and contact plugs, formed in the first insulating layer, over a semiconductor substrate, forming an etch barrier layer and a second insulating layer over the first insulating layer, forming damascene patterns in the second insulating layer, forming a mask layer over the second insulating layer of other region except a region in which the contact plugs are formed so that the damascene patterns are exposed through the region in which the contact plugs are formed, removing the etch barrier layer under the exposed damascene patterns using an etching process employing the mask layer, and removing the mask layer.