The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Aug. 18, 2006
Il-gon Kim, Seoul, KR;
Tae-hyeong Park, Yongin-si, KR;
Kook-chul Moon, Yongin-si, KR;
Chul-ho Kim, Yongin-si, KR;
Kyung-hoon Kim, Uiwang-si, KR;
Su-kyoung Kim, Suwon-si, KR;
Il-gon Kim, Seoul, KR;
Tae-hyeong Park, Yongin-si, KR;
Kook-chul Moon, Yongin-si, KR;
Chul-ho Kim, Yongin-si, KR;
Kyung-hoon Kim, Uiwang-si, KR;
Su-kyoung Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A thin film transistor substrate having a semiconductor layer including a low concentration region and a source region/drain region adjacent to the low concentration region at both sides of a channel region made of polysilicon; a gate insulating layer and a conductive layer on the substrate the conductive layer patterned to form a gate electrode.