The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Aug. 22, 2007
Applicants:
Shucheng Chu, Hamamatsu, JP;
Hirofumi Kan, Hamamatsu, JP;
Inventors:
Shucheng Chu, Hamamatsu, JP;
Hirofumi Kan, Hamamatsu, JP;
Assignee:
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a silicon device includes steps of: forming a silicon layerthat indicates a second conductivity type on a first surface Sof a silicon substratethat indicates a first conductivity type; and exposing, after the step, a third surface Sof the silicon layerfor a period of a minimum of 30 minutes and a maximum of 6 hours to an argon-containing atmosphere which is adjusted to temperatures of a minimum of 400° C. and a maximum of 900° C. and pressures of a minimum of 4 MPa and a maximum of 200 MPa.