The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7757380 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 20, 2010

Filed:

Nov. 10, 2006
Applicants:

Amanda Baer, Campbell, CA (US);

Hung-chin Guthrie, Saratoga, CA (US);

Yimin Hsu, Sunnyvale, CA (US);

Ming Jiang, San Jose, CA (US);

Aron Pentek, San Jose, CA (US);

Inventors:

Amanda Baer, Campbell, CA (US);

Hung-chin Guthrie, Saratoga, CA (US);

Yimin Hsu, Sunnyvale, CA (US);

Ming Jiang, San Jose, CA (US);

Aron Pentek, San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for improving within wafer and wafer to wafer yields during fabrication of notched trailing shield structures are disclosed. Ta/Rh CMP stop layers are deposited prior to planarization and notch formation to ensure a planar surface for trailing shield structures. These stop layers may be blanket deposited or patterned prior to CMP. Patterned stop layers produce the highest yields.


Find Patent Forward Citations

Loading…