The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Sep. 29, 2006
Gyeong S. Hwang, Austin, TX (US);
Scott A. Harrison, Santa Clara, CA (US);
Gyeong S. Hwang, Austin, TX (US);
Scott A. Harrison, Santa Clara, CA (US);
Other;
Abstract
A method for predicting the contribution of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation is disclosed. Initially, fundamental data for a set of microscopic processes that can occur during one or more material processing operations are obtained. The fundamental data are then utilized to build kinetic models for a set of reactions that contribute substantially to an evolution of n-type dopant concentration and electrical activities. The kinetic models are subsequently applied to a simulator to predict temporal and spatial evolutions of concentration and electrical activity profiles of the n-type dopants.