The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Nov. 09, 2005
Tsutomu Yamaguchi, Tokyo, JP;
Takehiro Nishida, Tokyo, JP;
Harumi Nishiguchi, Tokyo, JP;
Hitoshi Tada, Tokyo, JP;
Yasuaki Yoshida, Tokyo, JP;
Tsutomu Yamaguchi, Tokyo, JP;
Takehiro Nishida, Tokyo, JP;
Harumi Nishiguchi, Tokyo, JP;
Hitoshi Tada, Tokyo, JP;
Yasuaki Yoshida, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E) of the electric field at the center of a ridge and the magnitude (E) of the electric field at the edges of the trenches provide. a ratio E/Ethat is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.