The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Feb. 05, 2008
Applicants:
Chang-hee Shin, Chungcheongbuk-do, KR;
Ki-seok Cho, Chungcheongbuk-do, KR;
Inventors:
Chang-Hee Shin, Chungcheongbuk-do, KR;
Ki-Seok Cho, Chungcheongbuk-do, KR;
Assignee:
MagnaChip Semiconductor, Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor memory device is capable of reading data at a high speed, without using a reference cell transistor. The semiconductor memory device includes a sensing unit including first cross-coupled MOS transistors to sense and amplify a voltage difference between a first node and a second node, and a unit cell including second cross-coupled cell MOS transistors to latch data and output a first signal and a second signal corresponding to the latched data to the first node and the second node, respectively.