The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Feb. 06, 2009
Toru Anezaki, Kawasaki, JP;
Tomohiko Tsutsumi, Kawasaki, JP;
Tatsuji Araya, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Taiji Ema, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Tomohiko Tsutsumi, Kawasaki, JP;
Tatsuji Araya, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Taiji Ema, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device includes a first CMOS inverter, a second CMOS inverter, a first transfer transistor and a second transfer transistor wherein the first and second transfer transistors are formed respectively in first and second device regions defined on a semiconductor device by a device isolation region so as to extend in parallel with each other, the first transfer transistor contacting with a first bit line at a first bit contact region on the first device region, the second transfer transistor contacting with a second bit line at a second bit contact region on the second device region, wherein the first bit contact region is formed in the first device region such that a center of said the bit contact region is offset toward the second device region, and wherein the second bit contact region is formed in the second device region such that a center of the second bit contact region is offset toward the first device region.