The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Jun. 13, 2007
Rudy S. Padilla, San Diego, CA (US);
Michael G. Lovern, Chula Vista, CA (US);
Stephen D. Russell, San Diego, CA (US);
Randy L. Shimabukuro, Kapolei, HI (US);
Rudy S. Padilla, San Diego, CA (US);
Michael G. Lovern, Chula Vista, CA (US);
Stephen D. Russell, San Diego, CA (US);
Randy L. Shimabukuro, Kapolei, HI (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method of fabricating an optical modulator on a silicon substrate, comprising: forming a silicon nitride layer on the silicon substrate; forming a first polycrystalline silicon layer (PSL) on the silicon nitride layer; patterning the first PSL; forming a first silicon dioxide layer (SDL) on the first patterned PSL; patterning the first SDL; forming a second PSL on the first patterned SDL; patterning the second PSL; forming a second SDL on the second patterned PSL; patterning the second SDL; forming a third PSL on the second patterned SDL; patterning the third PSL; forming a metal layer on the third patterned PSL; patterning the metal layer; removing the first and second SDLs to effect release of first and second side reflectors; forming an active layer on the metal layer; and patterning the active layer or stack to form a base reflector and associated conductive traces for biasing.