The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2010

Filed:

Jan. 14, 2008
Applicants:

Anh Tuan Nguyen, Ho Chi Minh, VN;

Tadashi Nakatani, Kawasaki, JP;

Satoshi Ueda, Kawasaki, JP;

Yu Yonezawa, Yokohama, JP;

Naoyuki Mishima, Yokohama, JP;

Inventors:

Anh Tuan Nguyen, Ho Chi Minh, VN;

Tadashi Nakatani, Kawasaki, JP;

Satoshi Ueda, Kawasaki, JP;

Yu Yonezawa, Yokohama, JP;

Naoyuki Mishima, Yokohama, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 1/10 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A micro-switching device includes a fixing portion, a movable portion, a first electrode with first and second contacts, a second electrode with a third contact contacting the first contact, and a third electrode with a fourth contact opposing the second contact. In manufacturing the micro-switching device., the first electrode is formed on a substrate, and a sacrifice layer is formed on the substrate to cover the first electrode. Then, a first recess and a shallower second recess are formed in the sacrifice layer at a position corresponding to the first electrode. The second electrode is formed to have a portion opposing the first electrode via the sacrifice layer, and to fill the first recess. The third electrode is formed to have a portion opposing the first electrode via the sacrifice layer; and to fill the second recess. Thereafter the sacrifice layer is removed.


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