The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2010

Filed:

Jan. 07, 2009
Applicants:

Colin Neal Murphy, Belmont, CA (US);

Narbeh Derhacobian, Belmont, CA (US);

Louis Charles Kordus, Ii, Redwood City, CA (US);

Antonietta Oliva, San Jose, CA (US);

Vei-han Chan, San Jose, CA (US);

Thomas E. Stewart, Jr., Plano, TX (US);

Inventors:

Colin Neal Murphy, Belmont, CA (US);

Narbeh Derhacobian, Belmont, CA (US);

Louis Charles Kordus, II, Redwood City, CA (US);

Antonietta Oliva, San Jose, CA (US);

Vei-Han Chan, San Jose, CA (US);

Thomas E. Stewart, Jr., Plano, TX (US);

Assignee:

Agate Logic, Inc., Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/177 (2006.01); G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.


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