The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7755160 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 13, 2010

Filed:

Jan. 22, 2005
Applicants:

Zvonimir Gabric, Zorneding, DE;

Werner Pamler, Munich, DE;

Guenther Schindler, Munich, DE;

Inventors:

Zvonimir Gabric, Zorneding, DE;

Werner Pamler, Munich, DE;

Guenther Schindler, Munich, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/314 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a layer arrangement is disclosed. A layer of oxygen material and nitrogen material is formed over a substrate that has a plurality of electrically conductive structures and/or over a part of a surface of the electrically conductive structures. The layer is formed using a plasma-enhanced chemical vapor deposition process with nitrogen material being supplied during the supply of silicon material and oxygen material by means of an organic silicon precursor material. The layer of oxygen material and nitrogen material is formed in such a manner that an area free of material remains between the electrically conductive structures. An intermediate layer including an electrically insulating material is formed over the layer of oxygen material and nitrogen material. A covering layer is selectively formed over the intermediate layer such that the area free of material between the electrically conductive structures is sealed from the environment and forms a cavity.


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