The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Jun. 06, 2007
Emi Ohtsuka, Toyama, JP;
Mikiya Uchida, Kyoto, JP;
Ryohei Miyagawa, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An N-type epitaxial layer, which is formed above an N-type semiconductor substratein each of a pixel region and a peripheral circuit region; a first P-type wellformed above the N-type epitaxial layerin the pixel region; and light receiving regions, which are formed within the first P-type welland each of which is a component of a photodiode, are included. The peripheral circuit region includes: second P-type wells, which are formed from a surfaceof the peripheral circuit region to a desired depth and each of which is a component of an N-Channel MOS transistor; an N-type wellwhich is formed from the surfaceof the peripheral circuit region to a desired depth and which is a component of a P-Channel MOS transistor; and a third P-type wellwhich is formed so as to have such a shape as to isolate the N-type wellfrom the N-type epitaxial layerand which has a higher impurity concentration than that of the first P-type well