The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2010

Filed:

Jul. 22, 2008
Applicants:

Yeh-ning Jou, Taipei County, TW;

Geeng-lih Lin, Hsinchu County, TW;

Inventors:

Yeh-Ning Jou, Taipei County, TW;

Geeng-Lih Lin, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device is described. The semiconductor device comprises a protected device in a protected device area of a substrate. An electrostatic discharge power clamp device comprising an outer first guard ring and an inner second guard ring is in a guard ring area of the substrate, enclosing the protected device. The first guard ring comprises a first well region having a first conductive type. A first doped region having the first conductive type and a second doped region having a second conductive type are in the first well region. The second guard ring comprises a second well region having a second conductive type. A third doped region has the second conductive type in the second well region. An input/output device is in a periphery device area, coupled to the electrostatic discharge power clamp device.


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