The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Aug. 06, 2009
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Nana Hatano, Kanagawa-ken, JP;
Hiroshi Ohta, Hyogo-ken, JP;
Miho Watanabe, Tokyo, JP;
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Nana Hatano, Kanagawa-ken, JP;
Hiroshi Ohta, Hyogo-ken, JP;
Miho Watanabe, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device of the invention includes: a super junction structure of an n-type pillar layer and a p-type pillar layer; a base layer provided on the p-type pillar layer; a source layer selectively provided on a surface of the base layer; a gate insulating film provided on a portion being in contact with the base layer, a portion being in contact with the source layer and a portion being in contact with the n-type pillar layer on a portion of a junction between the n-type pillar layer and the p-type pillar layer; a control electrode provided opposed to the base layer, the source layer and the n-type pillar layer through the gate insulating film; and a source electrode electrically connected to the base layer, the source layer and the n-type layer. The source electrode is contact with the surface of the n-type pillar layer located between the control electrodes to form a Schottky junction.