The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Feb. 01, 2008
Hideyuki Kinoshita, Yokohama, JP;
Hideyuki Kinoshita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A NAND-type non-volatile semiconductor memory device has a semiconductor substrate, an element isolation insulating film which is formed on a surface of the semiconductor substrate spaced apart at a predetermined distance from each other, a first insulating film which is formed between the element isolation insulating films on the semiconductor substrate, a floating gate which is formed on the first insulating films, a second insulating gate which is formed on an end region of the floating gate, a control gate which is formed on the second insulating film, and a contact plug which is formed on a surface of the floating gate so that one end of the contact plug is electrically connected to the control gate.