The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Sep. 02, 2008
Yuji Awano, Kawasaki, JP;
Yuji Awano, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A field effect transistor according to the present invention includes a carbon nanotube of two or more walls having an inner wall and an outer wall, source and drain electrodes formed on both sides of the carbon nanotube, and a gate electrode formed in a gate formation region of the carbon nanotube, wherein the outer wall of the carbon nanotube is removed in the gate formation region to expose the inner wall, an insulation film is formed on the exposed inner wall, the gate electrode is formed on the exposed inner wall via the insulation film or via a Schottky junction, the source and drain electrodes are formed in contact with the outer wall and inner wall, and the carbon nanotube between the source and drain electrodes and the insulation film is covered by the outer wall.