The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Apr. 07, 2009
Seong-ju Park, Gwangju, KR;
Dae-kue Hwang, Gwangju, KR;
Min-ki Kwon, Gwangju, KR;
Min-suk OH, Gwangju, KR;
Yong-seok Choi, Gwangju, KR;
Seong-Ju Park, Gwangju, KR;
Dae-Kue Hwang, Gwangju, KR;
Min-Ki Kwon, Gwangju, KR;
Min-Suk Oh, Gwangju, KR;
Yong-Seok Choi, Gwangju, KR;
Gwangju Institute of Science and Technology, Gwangju, KR;
Abstract
Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.