The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Feb. 08, 2007
Jae Chang Jung, Seoul, KR;
Jae Chang Jung, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for forming a fine pattern of a semiconductor device include forming a stack structure including a 1layer hard mask film to a nlayer hard mask film (n is an integer ranging from 2 or more) over an underlying layer formed over a semiconductor substrate. The nlayer hard mask film, the top layer, is selectively etched to obtain a first hard mask pattern of the nlayer. A second hard mask pattern of the nlayer is formed between the first hard mask patterns of the nlayer. A (n−1)layer hard mask film is etched using the first and the second hard mask pattern of the nlayer as etching masks. The (c) step to the (d) step repeat to form the first and the second hard mask patterns of the 1layer over the underlying layer. And, the underlying layer is etched using the first and second hard mask patterns of the 1layer as etching masks.