The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Jun. 05, 2007
Byung Soo Eun, Seoul, KR;
Byung Soo Eun, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for forming an isolation layer in a semiconductor device comprises forming a trench inside a semiconductor substrate, forming a first high density plasma (HDP) oxide layer such that the first HDP oxide layer partially fills the trench, etching overhangs on sides of the trench by first cleaning with a hydrofluoric acid (HF) solution, subjecting a upper portion of the first HDP oxide layer to densification by second cleaning with an ozone (O3) solution, forming a liner HDP oxide layer having a high content of silicon (Si) over the first HDP oxide layer, and forming a second HDP oxide layer such that the second HDP oxide layer entirely fills the trench.