The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Aug. 03, 2005
Reshmi Mitra, South Portland, ME (US);
Scott Ruby, Lisbon Falls, ME (US);
Sergai Drizlikh, Scarborough, ME (US);
Thomas Francis, South Portland, ME (US);
Robert Tracy, South Portland, ME (US);
Reshmi Mitra, South Portland, ME (US);
Scott Ruby, Lisbon Falls, ME (US);
Sergai Drizlikh, Scarborough, ME (US);
Thomas Francis, South Portland, ME (US);
Robert Tracy, South Portland, ME (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
An electrical resistance is produced in a semiconductor device by first providing a semiconductor resistor structure that includes a semiconductor resistor having formed thereon a native oxide layer. A portion of the native oxide layer that overlies a corresponding top surface portion of the semiconductor resistor is removed, in order to expose the top surface portion of the semiconductor resistor. Metal is deposited on the exposed top surface portion of the semiconductor resistor. A chemical reaction is effectuated in order to reduce the likelihood of metal reacting with the underlying silicon on any portion of the semiconductor resistor other than the top surface portion thereof. The chemical reaction can be an oxidation reaction that produces on the semiconductor resistor structure an oxide layer other than the native oxide layer and substantially thicker than the native oxide layer.