The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Dec. 14, 2006
Eiichi Soda, Tsukuba, JP;
Eiichi Soda, Tsukuba, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A method of patterning a multiple-layered resist film and a method of manufacturing a semiconductor device, which can provide an improved reliability of the semiconductor devices and a reduced operation time for an etch process, are provided. A method of patterning a multiple-layered resist film according to the present invention include: forming a lower layer resist filmon a semiconductor substrate; forming a silicon-containing upper layer resist film on the lower layer resist film; patterning the silicon-containing upper layer resist film into a predetermined geometry; and performing dry etching process for removing the lower layer resist filmthrough a mask of the patterned silicon-containing upper layer resist filmemploying an etching gas containing oxygen (O) gas and argon (Ar) gas at a pressure within a range of from 0.075 mTorr to 50 mTorr both inclusive.