The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
May. 28, 2004
Masaya Shimizu, Niihama, JP;
Makoto Sasaki, Tsukuba, JP;
Yoshihiko Tsuchida, Tsukuba, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Abstract
A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InGaAlN (wherein x+y+z=1, 0<x<1, 0<y<1, and 0≦z<1) between the barrier layers, wherein a multiple quantum well structure having repeatedly the barrier layers and the quantum well layer is formed, a ratio of an average mole fraction of InN in the multiple quantum well layer, which is measured by x-ray diffraction, to a mole fraction of InN calculated from a wavelength of light emitted from the group III-V compound semiconductor due to current injection is not more than 42.5%.