The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7754512 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 13, 2010

Filed:

May. 03, 2005
Applicants:

Masumi Taninaka, Hachioji, JP;

Hiroyuki Fujiwara, Hachioji, JP;

Susumu Ozawa, Hachioji, JP;

Masaharu Nobori, Hachioji, JP;

Inventors:

Masumi Taninaka, Hachioji, JP;

Hiroyuki Fujiwara, Hachioji, JP;

Susumu Ozawa, Hachioji, JP;

Masaharu Nobori, Hachioji, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/00 (2006.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
Abstract

According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.


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