The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Mar. 29, 2006
Applicants:
Ta-jung Su, Padeh, TW;
Chin-tzu Kao, Padeh, TW;
Chia-che Hsu, Padeh, TW;
Inventors:
Assignee:
Chunghua Picture Tubes, Ltd., Padeh, Taoyuan, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A manufacturing method for a thin film transistor (TFT) is provided. In the manufactured TFT, after a source structure, a drain structure and a channel structure are formed, a first photoresist layer is not removed and a second photoresist is formed on the first photoresist layer through which a semiconductor structure is formed. Further, n-type amorphous silicon, poly silicon or an organic metallic compound is used in replace of the conventional metal to form the source and drain structures so as to reduce step number of manufacturing for the TFT.