The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2010

Filed:

May. 16, 2006
Applicants:

Akira Ohmae, Kanagawa, JP;

Shigetaka Tomiya, Kanagawa, JP;

Yuki Maeda, Miyagi, JP;

Michinori Shiomi, Kanagawa, JP;

Takaaki Ami, Kanagawa, JP;

Takao Miyajima, Kanagawa, JP;

Katsunori Yanashima, Kanagawa, JP;

Takashi Tange, Kanagawa, JP;

Atsushi Yasuda, Kanagawa, JP;

Inventors:

Akira Ohmae, Kanagawa, JP;

Shigetaka Tomiya, Kanagawa, JP;

Yuki Maeda, Miyagi, JP;

Michinori Shiomi, Kanagawa, JP;

Takaaki Ami, Kanagawa, JP;

Takao Miyajima, Kanagawa, JP;

Katsunori Yanashima, Kanagawa, JP;

Takashi Tange, Kanagawa, JP;

Atsushi Yasuda, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.


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