The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Apr. 14, 2008
Hisashi Minemoto, Osaka, JP;
Yasuo Kitaoka, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Yusuke Mori, Suita-shi, Osaka, JP;
Fumio Kawamura, Osaka, JP;
Takatomo Sasaki, Osaka, JP;
Hidekazu Umeda, Osaka, JP;
Yasuhito Takahashi, Osaka, JP;
Hisashi Minemoto, Osaka, JP;
Yasuo Kitaoka, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Yusuke Mori, Suita-shi, Osaka, JP;
Fumio Kawamura, Osaka, JP;
Takatomo Sasaki, Osaka, JP;
Hidekazu Umeda, Osaka, JP;
Yasuhito Takahashi, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Other;
Abstract
A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.