The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Oct. 02, 2007
Ryutaro Oke, Chiba, JP;
Kazunori Ojima, Mobara, JP;
Masaki Tsubokura, Mobara, JP;
Masashi Baba, Chiba, JP;
Yasuhiko Yamagishi, Mobara, JP;
Masahiro Tanaka, Yotsukaido, JP;
Yuuichi Takenaka, Chiba, JP;
Shinji Yasukawa, Shirako, JP;
Kikuo Ono, Mobara, JP;
Ryutaro Oke, Chiba, JP;
Kazunori Ojima, Mobara, JP;
Masaki Tsubokura, Mobara, JP;
Masashi Baba, Chiba, JP;
Yasuhiko Yamagishi, Mobara, JP;
Masahiro Tanaka, Yotsukaido, JP;
Yuuichi Takenaka, Chiba, JP;
Shinji Yasukawa, Shirako, JP;
Kikuo Ono, Mobara, JP;
Hitachi Displays, Ltd., Chiba, JP;
Abstract
TFTs are formed on a substrate. An interlayer insulation film is formed on the substrate to cover the TFTs. Lower layer portions of SD lines formed of a multi-layered film which are formed on the interlayer insulation film constitute a lower electrode of an organic EL layer. An uppermost layer of the SD line is formed of a chemically stable metal oxide film, and the SD layer is used as it is. On the other hand, as a lower electrode of an organic EL layer, an upper layer of the SD line is removed and an Al—Si, alloy film of the SD line is used. Due to such a constitution, it is possible to reduce a cost by shortening steps while holding the performance and the reliability of organic EL.