The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Dec. 28, 2006
Heong Jin Kim, Gyeongbuk, KR;
Sung Jin Kim, Busan, KR;
Heong Jin Kim, Gyeongbuk, KR;
Sung Jin Kim, Busan, KR;
Dongbu HiTek Co., Ltd., Seoul, KR;
Abstract
Embodiments relate to a dual metal interconnection structure of a semiconductor device and a method for manufacturing the same. In embodiments, the dual metal interconnection structure may include a contact plug selectively formed in an interlayer dielectric, which covers a silicon substrate, and contacted with an active area of the silicon substrate, a first aluminum interconnection formed on one contact plug in every two cells and having a width larger than a width of the contact plug, a dielectric wrapping an upper surface and a side plane of the first aluminum interconnection, and a second aluminum interconnection formed on one contact plug in every two cells alternatively with the first aluminum interconnection, insulated from the first aluminum interconnection by the dielectric, and having a width larger than a width of the contact plug. The dual metal interconnection structure may be formed by performing an interconnection process two times, and a width of the interconnection and a gap between interconnections may be increased.