The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Jan. 21, 2009
Applicant:
Tatsuo Harada, Chiyoda-ku, JP;
Inventor:
Tatsuo Harada, Chiyoda-ku, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/70 (2006.01);
U.S. Cl.
CPC ...
Abstract
An n-type buffer regionis arranged between an ndrift regionand a p-type collector region, and has a higher impurity concentration than ndrift regionAssuming that α represents the ratio (WTA/WTB) between WTA expressed as: and the thickness WTB of the drift region held between the base region and the buffer region, the ratio (D/D) of the net dose Dof the collector region with respect to the net dose Dof the buffer region is at least α. Thus, a semiconductor device capable of ensuring a proper margin of SCSOA resistance can be obtained.