The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Mar. 12, 2007
Minoru Watanabe, Honjo, JP;
Masakazu Morishita, Hiratsuka, JP;
Chiori Mochizuki, Sagamihara, JP;
Takamasa Ishii, Honjo, JP;
Keiichi Nomura, Honjo, JP;
Minoru Watanabe, Honjo, JP;
Masakazu Morishita, Hiratsuka, JP;
Chiori Mochizuki, Sagamihara, JP;
Takamasa Ishii, Honjo, JP;
Keiichi Nomura, Honjo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.