The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Aug. 06, 2008
Mark Rinehimer, Mountaintop, PA (US);
Mark Rinehimer, Mountaintop, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A structure that includes a rectifier is formed as follows. A trench is formed in a semiconductor region of a first conductivity type. A dielectric layer is formed along opposing sidewalls of the trench but is discontinuous along the bottom of the trench. A doped liner is formed over the dielectric layer and along the bottom of the trench. The doped liner includes dopants of a second conductivity type and is in direct contact with the semiconductor region along the bottom of the trench. A portion of the dopants are diffused from the doped liner into the semiconductor region along the bottom of the trench to form a doped region. The doped region forms a PN junction with the surrounding semiconductor region.