The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Aug. 22, 2007
Mutsuo Morikado, Yokohama, JP;
Mutsuo Morikado, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an aspect of the present invention, there is provided a semiconductor device including an insulated gate field effect transistor including a gate electrode film formed, via a gate insulating film, on a semiconductor film formed on a support substrate via an insulating film, and a source region and drain region formed in the semiconductor film to sandwich the gate electrode film in a gate length direction, a support substrate contact including a polysilicon film formed on a first opening via a silicon oxide film, the first opening extending through the semiconductor film and the insulating film and reaching the support substrate, an interlayer dielectric film formed on the semiconductor film and the support substrate contact, and an interconnection connected to the polysilicon film via a conductive material, the conductive material filling a second opening, which extends through the interlayer dielectric film and reaches the support substrate contact.