The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2010

Filed:

Aug. 21, 2007
Applicants:

Eun-ae Chung, Seoul, KR;

Ki-sun Kim, Seoul, KR;

Young-sun Kim, Suwon-si, KR;

Jin-tae Noh, Suwon-si, KR;

Inventors:

Eun-ae Chung, Seoul, KR;

Ki-sun Kim, Seoul, KR;

Young-sun Kim, Suwon-si, KR;

Jin-tae Noh, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a lower electrode of a capacitor, a dielectric layer disposed on the lower electrode, and an upper electrode of the capacitor disposed on the dielectric layer. The upper electrode includes a doped poly-SiGelayer. An interlayer insulating layer is disposed on the doped poly-SiGelayer and has a contact hole partially exposing the doped poly-SiGelayer. A metal contact plug is in the contact hole and an interconnection layer is disposed on the interlayer insulating layer and connected to the metal contact plug. Related interconnection structures and fabrication methods are also disclosed.


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