The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Jun. 05, 2007
Hyun-chul Kim, Seoul, KR;
Sung-il Cho, Seoul, KR;
Jae-seung Hwang, Gyeonggi-do, KR;
Jun Sen, Gyeonggi-do, KR;
Yong-hyun Kwon, Gyeonggi-do, KR;
Hyun-chul Kim, Seoul, KR;
Sung-il Cho, Seoul, KR;
Jae-seung Hwang, Gyeonggi-do, KR;
Jun Sen, Gyeonggi-do, KR;
Yong-hyun Kwon, Gyeonggi-do, KR;
Abstract
Provided is a method of manufacturing a semiconductor device using double patterning. The method includes: forming a first material layer pattern having recesses in a first direction on an object layer and a second material layer pattern formed on the first material layer pattern; selectively etching the second material layer pattern and the first material layer pattern in a direction perpendicular to the first direction to form an etching mask; and etching the object layer to form minute patterns.