The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Aug. 03, 2005
Jun Osanai, Chiba, JP;
Jun Osanai, Chiba, JP;
Seiko Instruments Inc., , JP;
Abstract
In a method of manufacturing a semiconductor integrated circuit device, a gate electrode is formed over a semiconductor substrate. An insulating film is then formed on the gate electrode and on regions corresponding to a source and a drain of the semiconductor integrated circuit device. The source and the drain are then formed. A nitride film is then selectively formed over the source and the gate electrode via the insulating film so that the nitride film extends over the gate electrode to a position short of a center of the gate electrode in a length direction thereof and so that a width of the nitride film is shorter than a channel width of the semiconductor integrated circuit device.