The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Aug. 05, 2008
Applicants:
Joel P. DE Souza, Putnam Valley, NY (US);
Harold John Hovel, Katonah, NY (US);
Daniel A. Inns, White Plains, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
Inventors:
Joel P. De Souza, Putnam Valley, NY (US);
Harold John Hovel, Katonah, NY (US);
Daniel A. Inns, White Plains, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for improving the minority lifetime of silicon containing wafer having metallic contaminants therein is described incorporating annealing at 1200° C. or greater and providing a gaseous ambient of oxygen, an inert gas and a chlorine containing gas such as HCl.