The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Jan. 19, 2007
Walter Schwarzenbach, Saint Nazaire les Eymes, FR;
Nadia Ben Mohamed, Renage, FR;
Christophe Maleville, La Terrasse, FR;
Corinne Maunand Tussot, Meylan, FR;
Walter Schwarzenbach, Saint Nazaire les Eymes, FR;
Nadia Ben Mohamed, Renage, FR;
Christophe Maleville, La Terrasse, FR;
Corinne Maunand Tussot, Meylan, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile