The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Apr. 28, 2006
Applicant:
Jun-hee Cho, Ichon-shi, KR;
Inventor:
Jun-Hee Cho, Ichon-shi, KR;
Assignee:
Hynix Semiconductor, Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device with a bulb-shaped recess gate pattern is provided. The method includes forming a plurality of oxide layers over a substrate; forming a silicon layer to cover the oxide layers; forming a mask over the silicon layer; etching the silicon layer using the mask as an etch mask to form a plurality of first recesses to expose the oxide layers; etching the oxide layers to form a plurality of second recesses; and forming a plurality of gate patterns at least partially buried into the first recesses and the second recesses.