The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Aug. 29, 2007
Masatoshi Arai, Nara, JP;
Masatoshi Arai, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A method of fabricating a nonvolatile semiconductor memory device includes the steps of: (a) forming a layered dielectric film on the semiconductor substrate; (b) forming a first conductive film on the layered dielectric film; (c) forming a first dielectric film on the first conductive film; (d) patterning the first dielectric film and the first conductive film to form a layered pattern composed of first dielectric films and first conductive films; and (e) implanting a first impurity along a direction having an inclination angle to a normal direction to a principal plane of the semiconductor substrate by using the layered pattern as a mask to form a first impurity diffusion layer being the same in conductivity type as the semiconductor substrate, wherein, step (d) includes patterning the first dielectric film to form the first dielectric films having a shape with a width narrower in an upper surface than in a lower surface.