The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Jun. 22, 2005
Woon Suh Paik, Gyeonggi-do, KR;
Woon Suh Paik, Gyeonggi-do, KR;
Neopoly Inc., Seoul, KR;
Abstract
A method of forming wires of a poly-crystalline TFT by crystallizing an amorphous silicon thin film using a metal film is provided. The wires forming method includes the steps of: removing a MILC metal film; forming etch-stopper layer patterns on at least part of respective source and drain regions formed on a semiconductor layer; forming an interlayer insulation film on the substrate; etching the interlayer insulation film to thereby form contact holes which expose the etch-stopper layer patterns of the source and drain regions; and forming a wires metal film contacting the etch-stopper layer patterns, and patterning the wires metal film to thus form metal wires. Thus, as the etch-stopper layer patterns are additionally installed at the contact positions, a silicon thin film can be protected at etching the interlayer insulation film.