The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Mar. 02, 2007
Applicants:
Toshihiko Omi, Chiba, JP;
Yoichi Mimuro, Chiba, JP;
Inventors:
Toshihiko Omi, Chiba, JP;
Yoichi Mimuro, Chiba, JP;
Assignee:
Seiko Instruments Inc., Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a photoelectric conversion device including: a semiconductor substrate () of a first conductivity type; a photoelectric conversion region () of a second conductivity type which is located in the semiconductor substrate (), the second conductivity type being opposite to the first conductivity type; and a buried layer () of the first conductivity type which is formed in an inner portion of the semiconductor substrate () to cover a lower side of the photoelectric conversion region (), the buried layer () including a higher impurity concentration than the semiconductor substrate ().