The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Mar. 18, 2008
Demetrios P Papageorgiou, Weston, MA (US);
Demetrios P Papageorgiou, Weston, MA (US);
Solid-State Research, Inc., Weston, MA (US);
Abstract
A process producing a single-crystalline device fabricated on a single-sided polished wafer employing processing from only the front-side and having a significant separation between the device and substrate is provided. In one embodiment, a method comprises an upper layer and a lower substrate. A device is formed in the upper layer, defined by gaps. The gaps are filled with at least one material that has etch characteristics different from those of the device and the substrate. At least a top portion of the gap material is removed from the upper layer. The gap material is etched so that a portion of the gap-material remains on the sidewalls of the surrounding upper layer. The material beneath the device is then etched, excluding an insulating layer beneath the device, releasing the device from the substrate. The insulating material beneath the device is then etched, the etch being selective to the insulating material and the gap material.