The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Nov. 14, 2005
Jin Soo Kim, Daejeon, KR;
Jin Hong Lee, Daejeon, KR;
Sung Ui Hong, Daejeon, KR;
Byung Seok Choi, Daejeon, KR;
Ho Sang Kwack, Daejeon, KR;
Dae Kon OH, Daejeon, KR;
Jin Soo Kim, Daejeon, KR;
Jin Hong Lee, Daejeon, KR;
Sung Ui Hong, Daejeon, KR;
Byung Seok Choi, Daejeon, KR;
Ho Sang Kwack, Daejeon, KR;
Dae Kon Oh, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a method of forming quantum dots, including: forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate; and sequentially alternately depositing In(Ga)As layers and InAl(Ga)As or In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As or In(Ga, Al, P)As quantum dots.