The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Sep. 21, 2005
Woon Suh Paik, Gyeonggi-do, KR;
Woon Suh Paik, Gyeonggi-do, KR;
Neopoly Inc., Seoul, KR;
Abstract
A low-temperature poly-crystalline thin film transistor in which amorphous silicon is crystallized using a laser crystallization method or a metal induced lateral crystallization method shows an unstable electrical property since crystallization is accomplished at a low temperature. When an electrical stress is applied to the low-temperature poly-crystalline thin film transistor and a lower substrate for a display device including the same, an electrical feature thereof is enhanced. To apply an electrical stress to the low-temperature poly-crystalline thin film transistor, the source of a thin film transistor is grounded, and a critical voltage which is determined according to a gate voltage applied between the drain and the source of the thin film transistor, at a state where any gate voltage has been applied between the gate and the source of the thin film transistor.