The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Nov. 01, 2007
Hye-jin Kim, Gangnam-gu, KR;
Kwang-jin Lee, Hwaseong-si, KR;
Du-eung Kim, Yongin-si, KR;
Woo-yeong Cho, Suwon-si, KR;
Chang-han Choi, Suwon-si, KR;
Ki-won Lim, Suwon-si, KR;
Hye-jin Kim, Gangnam-gu, KR;
Kwang-jin Lee, Hwaseong-si, KR;
Du-eung Kim, Yongin-si, KR;
Woo-yeong Cho, Suwon-si, KR;
Chang-han Choi, Suwon-si, KR;
Ki-won Lim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A PRAM includes a memory cell array of phase change memory cells, and a write circuit receiving an externally provided first voltage and supplying a write pulse for writing data to the memory cells in a normal operation mode. The write circuit also receives an externally provided second voltage higher than the first voltage and supplies a firing pulse to at least one firing-failed phase change memory cell.